IRFZ44N
KSh 50.00
In stock
IRFZ44N – N-Channel Power MOSFET (TO-220)
The IRFZ44N is a high-performance N-channel enhancement-mode power MOSFET designed for robust switching and high current handling in a wide range of power electronic applications. Built using advanced HEXFET® process technology, the device offers low on-resistance, fast switching, and excellent thermal performance—making it ideal for motor drives, power supplies, DC-DC converters, and general power switching circuits.
Key Specifications
• Part Number: IRFZ44N
• Package Type: TO-220 (Through-Hole)
• Transistor Type: N-Channel Power MOSFET
• Maximum Drain-Source Voltage (VDS): 55 V
• Continuous Drain Current (ID): 49 A @ 25 °C
• Pulsed Drain Current: ~160 A
• Gate-Source Voltage (VGS): ±20 V (max)
• Gate Threshold Voltage (VGS(th)): 2 – 4 V
• On-Resistance (RDS(on)): ~17.5 mΩ (low)
• Power Dissipation: ~94 W
• Operating & Storage Temp: –55 °C to +175 °C
• Typical Switching Characteristics: Fast rise/fall times (nanosecond-class)
Features
High Current Capability: Supports high continuous and pulsed currents for demanding loads.
Low On-Resistance: Minimizes conduction losses and heat generation under load.
Fast Switching Performance: Excellent switching speed for PWM and high-frequency applications.
Robust Thermal Design: Can operate at high junction temperatures and dissipate significant power with proper heatsinking.
±20 V Gate Tolerance: Provides margin for gate drive signals.
Avalanche Rated: Designed for reliable operation in inductive switching environments.
Typical Applications
DC-DC converters and power supply switching
Motor control and H-bridge drivers
PWM speed/brightness control in embedded systems
Load switching in automotive and industrial electronics
High-current switching in power management circuits
Package & Pinout
The IRFZ44N is supplied in a standard TO-220 through-hole package with the following pin configuration:
Gate – Control terminal
Drain – Connected to load / power
Source – Reference / ground
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