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IXTH44P15T Mosfet

KSh 750.00

Out of stock

The IXTH44P15T is a high-power P-channel enhancement-mode MOSFET from IXYS, designed for switching and power-control applications. It is rated for 150V drain-source voltage and up to 44A continuous drain current under specified case-temperature conditions. The device uses a TO-247-3 through-hole package and has a maximum on-state resistance of 65mΩ at the specified test conditions.

Key Features:

  • Type: P-Channel MOSFET
  • Drain-Source Voltage: 150V
  • Continuous Drain Current: 44A at specified case temperature
  • RDS(on): 65mΩ maximum
  • Gate-Source Voltage: ±15V maximum
  • Package: TO-247-3
  • Power Dissipation: 298W at specified case conditions
  • Operating Junction Temperature: −55°C to +150°C

Applications:

  • High-power switching
  • DC power control
  • Motor control
  • Battery and power-management systems
  • Industrial power electronics
  • High-side switching applications

The IXTH44P15T is suited to applications requiring high voltage and high current switching, particularly where a robust P-channel power MOSFET is required.

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