The IXTH44P15T is a high-power P-channel enhancement-mode MOSFET from IXYS, designed for switching and power-control applications. It is rated for 150V drain-source voltage and up to 44A continuous drain current under specified case-temperature conditions. The device uses a TO-247-3 through-hole package and has a maximum on-state resistance of 65mΩ at the specified test conditions.

Key Features:

Type: P-Channel MOSFET
Drain-Source Voltage: 150V
Continuous Drain Current: 44A at specified case temperature
RDS(on): 65mΩ maximum
Gate-Source Voltage: ±15V maximum
Package: TO-247-3
Power Dissipation: 298W at specified case conditions
Operating Junction Temperature: −55°C to +150°C

Applications:

High-power switching
DC power control
Motor control
Battery and power-management systems
Industrial power electronics
High-side switching applications

The IXTH44P15T is suited to applications requiring high voltage and high current switching, particularly where a robust P-channel power MOSFET is required.